Examples of using 体管 in Chinese and their translations into English
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PWM调光是通过控制MOSFET晶体管实现。
该NMOS晶体管的阈值电压实际上是负的。
PWM调光是通过控制MOSFET晶体管实现的。
PWM dimming is achieved by controlling MOSFET transistors.LTPS和MO晶体管的生产推动了氧化亚氮的使用。
LTPS and MO transistor production is driving nitrous oxide usage.超洁净的制造平台可生产近乎理想的2D晶体管.
Ultra-clean fabrication platform produces nearly ideal 2-D transistors.IBM的科学家们正在研究隧道场效应晶体管(TFET)。
IBM scientists are researching tunnel field effect transistors(TFETs).LTPS和MO晶体管的生产推动了氧化亚氮的使用。
The production of LTPS and MO transistors has driven the use of nitrous oxide.VoltaV100在12nm制造工艺中拥有大约21B晶体管。
A Volta V100 has roughly 21B transistors in a 12nm manufacturing process.为了减少的能耗，IBM的科学家们正在研究隧道场效应晶体管(TFET)。
IBM scientists are researching tunnel field effect transistors(TFETs).这是一个PNP晶体管(ICgt;25)和至少20电流放大系数。
This is a PNP transistor(Icgt;25) and current amplification factor of at least 20.在这些节点处，代工厂正在逐步增加基于finFET晶体管的工艺。
At those nodes,foundries are ramping up processes based on finFET transistors.FinFET晶体管架构是当今半导体行业的主力军。
The FinFET transistor architecture is the workhorse of today's semiconductor industry.第三,最重要的是,计算机革命是由小型化晶体管。
Third, and most important,the computer revolution is driven by miniaturizing transistors.在隧道场效应晶体管中，两个小槽被一个能量势垒分开。
In a tunnel field effect transistor, two small slots are separated by an energy barrier.NPN和PNP晶体管符号中的箭头表示基极和发射极之间的PN结。
The arrows in the NPN and PNP transistor symbols indicate the PN junction between the base and emitter.也就是说，一个PNP晶体管是“接通”时，其基极被拉到低相对于发射器。
That is, a PNP transistor is“on” when its base is pulled low relative to the emitter.本系统采用脉宽调制控制器方式，并选用MOS晶体管作为开关器件。
This system adopts the pulse width modulation controller way,and choose MOS transistor as the switch device.反相器可以仅用一个NMOS晶体管或一个PMOS连接一个电阻来构建。
Inverters can be constructed using a single NMOS transistor or a single PMOS transistor coupled with a resistor.晶体晶体管是信号放大和处理的核心器件，广泛应用于pcba贴片加工处理。
Crystal transistor is the core device of signal amplification and processing, widely used in pcba chip processing.为了减少的能耗，IBM的科学家们正在研究隧道场效应晶体管(TFET)。
To reduce the energy consumption in electronics,IBM scientists are researching tunnel field effect transistors(TFETs).GaN晶体管的显着性能优势已被用于直接改善雷达的性能。
The significant performance benefits of GaN transistors have been harnessed to directly improve the performance of the radar.为了实现有关功率密度和系统效率的宏伟目标，必须使用SiC晶体管和二极管。
In order to achieve ambitious goals regarding power density and system efficiency,it is necessary to use SiC transistors and diodes.GaAs晶体管使得装有小电池的手提电话能够建立与发射塔的关键通信链路。
GaAs transistors enabled handheld phones with small batteries to establish the critical communications link to the towers.如需生成传播延迟和能耗相应增大的AND和OR，则需要增加一个反相晶体管。
An extra inverting transistor is needed to yield AND and OR with a corresponding increase in propagation delay and power consumption.半导体晶体管的发明使得微处理器开始诞生，从而大大加速了电脑编程的发展。
The invention of the transistor semiconductor gave rise to the microprocessor, which accelerated the development of computer programming.实际上，MIMIC计划可以实现GaAs晶体管技术，从而产生一类新的RF“前端”组件。
In fact,the MIMIC program was able to realize GaAs transistor technology that led to a new class of RF(radio frequency)“front end” components.近日，该团队首次成功开发出可以量产的高密度、高灵敏度、可拉伸晶体管阵列。
Recently, the team successfully developed a high-density, high-sensitivity,stretchable transistor array that can be mass-produced for the first time.此外，随着市场的增长，由于规模经济的关系，SiC或GaN晶体管和二极管在经济上也越来越具有吸引力。
In addition, as the market grows, SiC or GaN transistors and diodes become more and more attractive economically due to economies of scale.因此，硅纳米片可以在纳米电子学中应用，例如在柔性显示器，场效应晶体管和光电探测器中。
Silicon nanosheets might thus find application in nanoelectronics, for example in flexible displays,field-effect transistors and photodetectors.由于这些原因，GaN晶体管可能会成为2020年代后期逆变器中的首选，优于较昂贵的SiCMOSFET。
For these reasons, GaN transistors may be the first choice for inverters in the late 2020s, and are superior to the more expensive SiC MOSFETs.
