What is the translation of " 氮化镓 " in English?

• gallium nitride
• gan
• gallium-nitride

Examples of using 氮化镓 in Chinese and their translations into English

氮化镓肖特基二极管.
Gallium Nitride Schottky Diode.

形成）当由电子激发，氮化镓发出蓝色和紫外光;
When excited by electrons, GaN emits blue and ultraviolet light;

这些通常是碳化硅或氮化镓（GAN）器件。
These would most commonly be silicon carbide or gallium nitride(GAN) devices.

氮化镓技术已经成熟至可以挑战传统的硅技术。
GaN technology has matured to a point where it can challenge traditional silicon technology.

氮化镓晶体管能应对1000摄氏度以上的高温；.
Gallium nitride transistors can cope with temperatures above 1000 degrees Celsius;

此外，氮化镓（GaN）基材料正成为研究和开发的目标。
Furthermore, gallium nitride(GaN) devices are becoming a target of research and development now.

氮化镓晶体管首次出现在20世纪90年代，现在已经广泛用于商业和国防领域。
GaN transistors were first demonstrated in the 1990s and now are widely available for commercial and defense applications.

在本系列的第一篇文章中，我们探讨了氮化镓（GaN）技术是如何处理这些因素的。
In the first article of this serieswe explored how gallium nitride(GaN) technology is addressing each of these factors.

CREE开发及制造主要基于碳化硅（SiC），氮化镓（GaN）和相关化合物的半导体材料及器件。
We develop and manufacture semiconductor materials and devices primarily based on silicon carbide(SiC), gallium nitride(GaN) and related compounds.

采用硅片更便宜：欧司朗已制成高性能白色LED，他们是在15厘米长的硅晶片上培育氮化镓，如图所示。
Cheaper on silicon: Osram has made high-performance white LEDs by growing gallium-nitride on 15-centimeter silicon wafers, as seen here.

目前，氮化镓（GaN）已成为最重要、最广泛应用的半导体材料之一。
Gallium nitride(GaN) has become one of the most significant and extensively used semiconducting materials.

其中之一是扩大碳化硅功率半导体生产的装机容量，并扩大用于射频的氮化镓生产。
One is the expansion of installed capacity for silicon-carbide power semiconductor production and the ramp up of gallium-nitride production for RF.

氮化镓(GaN)功率半导体技术为提高RF/微波功率放大的性能水平作出了巨大贡献。
Gallium nitride(GaN) power semiconductor technology has contributed a great deal to improved performance levels in RF/microwave power amplification.

不过印度电子和雷达发展机构自2012年以来一直在研制一种固态的氮化镓雷达，目前没有消息。
However, the Indian Electronics and Radar Development Establishment has been working on a solid-state Gallium-Nitride radar since 2012.

它还是氮化镓雷达，比老式的SPY-1D系统更容易维护。
It's also a gallium nitride, solid-state radar that's easier to maintain than the old SPY-1D system.

安克尔使用氮化镓代替硅，这使得该公司可以大幅度地减少部件的尺寸。
Anker employed Gallium Nitride instead of Silicon, which allowed the company to drastically reduce the size of the components.

为什么？因为诸如碳化硅(SiC)和氮化镓(GaN)等WBG材料可极大提高功率转换效率。
WBG materials such as silicon carbide(SiC) and gallium nitride(GaN) can greatly improve power conversion efficiency.

当氮化锆、氮化铝和氮化镓沉积在硅上时，它们排列成与硅相匹配的晶体结构。
As the zirconium nitride, aluminum nitride and gallium nitride are deposited on the silicon, they arrange themselves in a crystalline structure matching that of silicon.

随着成本下降，氮化镓在功率大小和效率方面明显优于现今的技术。
As costs come down, gallium nitride offers a clear advantage over today's technologies in power size and efficiency.

在询问一些与会者时，我们被告知新的热门产品是氮化镓半导体。
In quizzing some of the attendees we were told that the new hot item is Gallium Nitride semiconductors.

在600V，700V的情况下，它将很难与氮化镓技术竞争。
At 600, 700 volts, it will have a hard time competing with the gallium nitride technology.

DOCSIS3.1放大器由氮化镓(GaN)制成，这是一种半导体技术，具有高功率系统的独特性能。
DOCSIS 3.1 amplifiers are made with gallium nitride(GaN), a semiconductor technology with unique properties for high-power systems.

但随着硅基电源半导体的发展，以及氮化镓基半导体的商业化应用，情况已不再如此。
But with the advancement in silicon-based power semiconductors, as well as the commercial availability of Gallium Nitride based semiconductors, this is no longer the case.

一个这样的应用是激光雷达的新兴市场，在那里使用了一种超高速大功率氮化镓激光驱动器。
One such applicationis the emerging market of lidar, where an ultra-fast high-power GaN-based laser driver is employed.

这包括向大规模MIMO解决方案的持续转变，利用LDMOS和氮化镓产品。
This includes the continued shift towards massive MIMO solutions, leveraging both LDMOS, as well as Gallium Nitride-based products.

基于氮化镓和氮化镓铝（AlGaN/GaNHEMT）的HEMT提供了更高的电子迁移率，并且正在为各种应用开发。
HEMTs based on gallium nitride and aluminium gallium nitride(AlGaN/GaN HEMTs) provide a still higher electron mobility and are being developed for various applications.

Qorvo的砷化镓(GaAs)和氮化镓(GaN)技术可满足当今电子战(EW)应用所需的宽带性能要求。
Qorvo's gallium arsenide(GaAs) and gallium nitride(GaN) technologies offer the wideband performance required by today's electronic warfare(EW) applications.

宽禁带（WBG）半导体，如碳化硅和氮化镓可以在较高的温度下工作，并具有更高的耐用性和可靠性更高的电压和频率。
WBG semiconductors such as silicon carbide and gallium nitride can operate at higher temperatures and have greater durability and reliability at higher voltages and frequencies.

随着新技术的不断涌现，更有效和更集成的转换器可以满足小的更复杂的需求，主要在碳化硅和氮化镓半导体….
As new technologies emerge, more efficient and integrated converters can meet the requirements which are more complicated, primarily in silicon carbide and gallium nitride semiconductors.

TriQuint氮化镓产品/技术发展.
GaN Product/ Technology Development.