Примери коришћења Memristor на Енглеском и њихови преводи на Српски
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Such a device would act as a memristor under all conditions, but would be less practical.
Williams also has a U.S. patent application related to the memristor construction.
A linear time-invariant memristor, with a constant value for M, is simply a conventional resistor.
As long as M(q(t)) varies little, such as under alternating current, the memristor will appear as a resistor.
This indicates that the memristor theory needs to be extended or corrected to enable accurate ReRAM modeling.
A Lissajous curve is used in experimental tests to determine if a device may be properly categorized as a memristor.
A memristor is a hypothetical electronic device whose resistance is dependent on the current that has gone through the device previously.
It took until 2008 for HP researchers to find the memristor based on an analysis of a thin film of titanium dioxide.
A quantum memristor would implement nonlinear interactions in the quantum dynamics which would aid the search for a fully functional quantum neural network.
In October 2011, the team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM.
In March 2012,a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.
Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor, and inductor.
In July 2008, Erokhin and Fontana claimed to have developed a polymeric memristor before the more recently announced titanium dioxide memristor.
Experimental evidence shows that redox-based resistance memory(ReRAM)includes a nanobattery effect that is contrary to Chua's memristor model.
Other scientists had already proposed dynamic memory resistors such as the memristor of Bernard Widrow but Chua attempted to introduce mathematical generality.
The memristor was originally defined in terms of a non-linear functional relationship between magnetic flux linkage Φm(t) and the amount of electric charge that has flowed, q(t).
Although not cited in HP's initial reports on their TiO2 memristor, the resistance switching characteristics of titanium dioxide was originally described in the 1960s.
The HP Labs group noted that"window functions" were necessary to compensate for differences between experimental measurements and their memristor model due to non-linear ionic drift and boundary effects.
In contrast to a linear(or non-linear) resistor the memristor has a dynamic relationship between current and voltage including a memory of past voltages or currents.
Recently, based on a neuromimetic approach, a novel ingredient has been added to the field of quantum machine learning,in the form of a so-called quantum memristor, a quantized model of the standard classical memristor.
To relate the memristor to the resistor, capacitor, and inductor, it is helpful to isolate the term M(q), which characterizes the device, and write it as a differential equation.
In 2009, a simple electronic circuit consisting of an LC network and a memristor was used to model experiments on adaptive behavior of unicellular organisms.
The type of memristor described by Williams ceases to be ideal after switching over its entire resistance range, creating hysteresis, also called the"hard-switching regime".
In the mid 2000's, a simple electronic circuit consisting of an LC network and a memristor was used to model experiments on adaptive behavior of unicellular organisms.
Other researchers noted that memristor models based on the assumption of linear ionic drift do not account for asymmetry between set time(high-to-low resistance switching) and reset time(low-to-high resistance switching) and do not provide ionic mobility values consistent with experimental data.
The paper from the HP Labs group noted that“window functions” were necessary to compensate for differences between experimental measurements and their memristor model due to nonlinear ionic drift and boundary effects.
Some researchers have raised the question of the scientific legitimacy of HP's memristor models in explaining the behavior of ReRAM. and have suggested extended memristive models to remedy perceived deficiencies.
The memristor was originally defined in terms of a non-linear functional relationship between magnetic flux linkage Φm(t) and the amount of electric charge that has flowed, q(t): f( Φ m( t), q( t))= 0{\displaystyle f(\mathrm{\Phi}_{\mathrm{m}}(t), q(t))=0} The magnetic flux linkage, Φm, is generalized from the circuit characteristic of an inductor.
Like other two-terminal components(e.g., resistor, capacitor, inductor), real-world devices are never purely memristors("ideal memristor"), but will also exhibit some amount of capacitance, resistance, and inductance.
Martin Reynolds, an electrical engineering analyst with research outfit Gartner,commented that while HP was being sloppy in calling their device a memristor, critics were being pedantic in saying that it was not a memristor.