영어에서 Be formed using 을 사용하는 예와 한국어로 번역
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Colloquial
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Ecclesiastic
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Ecclesiastic
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Programming
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Computer
Antennas 40 may be formed using any suitable types of antenna.
In addition, the signal line driver circuit and the scanning line driver circuit can be formed using only the n-channel TFT.
Inconel 690™ can be formed using all conventional techniques.
Accordingly, the transistor can be formed at room temperature orat a low vacuum, or can be formed using a large substrate.
Alternatively, the gate insulating layer 146 can be formed using a material including a Group 13 element and oxygen.
Thus, a transistor can be formed at room temperature, can be formed at a low vacuum, or can be formed using a large substrate.
Such a connection may be formed using other network connection without facilitation by a service(e.g., over just an 802.15.4 network connection).
Therefore, driver circuits in display devices or the like can be formed using the TFTs(for example, see Reference 2).
Since the respective color filters 606 can be formed using a combination of spin coating and photolithography or by printing, the color filters 606 can be formed on the plastic film without a problem.
Hitherto, it is known that an AND circuit and an OR circuit can be formed using a diode serving as a two-terminal device.
The prodrugs of the invention can be formed using known chemical coupling techniques for covalent attachment of activated polymers, such as an activated PEG, to a biologically active agent(See, for example, POLY(ETHYLENE GLYCOL) CHEMISTRY AND BIOLOGICAL APPLICATIONS, American Chemical Society, Washington, D.C.(1997)).
The first transistor(Tr1) or the third transistor(Tr3) may be formed using a semiconductor thin film, or may be formed using a bulk semiconductor substrate.
Any one of the thin film transistors described in Embodiment Modes 2 to 9 can be suitably used as each of the thinfilm transistors 4010 and 4011 and can be formed using the same process and the same material.
In the case where an In- Ga- Zn- O-based metal oxide, for example, is used for the oxide semiconductor film 359,the metal oxide film 371 and the metal oxide film 373 may be formed using a metal oxide containing gallium oxide, particularly, a Ga- Zn- O-based metal oxide obtained by adding zinc oxide to gallium oxide.
Inconel 601™ is formed using all conventional techniques.
It's formed using agreed conventions.
The channel estimate can be updated or a new estimate is formed using the additional LTF.
In the disclosed invention, a semiconductor device is formed using a material that can sufficiently reduce off-state current of a transistor, for example, an oxide semiconductor material that is a wide gap semiconductor.
According to Embodiment 5, a protective circuit is formed using a non-linear element including an oxide semiconductor; thus, a display device having a structure suitable as a protective circuit can be provided.
According to Embodiment 6, a protective circuit is formed using a non-linear element including an oxide semiconductor; thus, a display device having a structure suitable as a protective circuit can be provided.
In this case, the element substrate can be formed by using seven masks.
In addition, the W film can be formed by thermal CVD using tungsten hexafluoride(WF6).
As another method, the W film may also be formed by thermal CVD using tungsten hexafluoride(WF6).
Alternatively, the W film can also be formed by a thermal CVD method using tungsten hexafluoride(WF6).
Forming the sole structure 208 using rapid manufacturing techniques may permit complex shapes to be formed, some of which may be impossible to form using conventional manufacturing techniques.
While coke can be formed naturally, the commonly used form is synthetic.
VICTREX Pipes can be bent, flared and formed using heat and conventional tube bending equipment.
The channel estimate may be updated or a new estimate formed using the additional LTFs.
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