Examples of using Thin insulating layer in English and their translations into French
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Colloquial
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Official
Depositing a thin insulating layer corresponding to the capacitor dielectric;
The P+ region 36 may be covered by a thin insulating layer.
Forming a thin insulating layer around the control gate;
As indicated hereinbefore,it is also possible to leave a thin insulating layer.
A thin insulating layer is formed on the walls of trenches 16.
An etch stop is made on the thin insulating layer 102(FIG. 5C.
This thin insulating layer 101 can be for example based on SiO 2.
The surface of the active zone is subsequently covered with a thin insulating layer 6.
The thin insulating layer 4 is possibly made of insulating resin.
Established design of parallel thin wires coated with a thin insulating layer.
Forming a second thin insulating layer against the wall of the recess; and.
Method for treating a silicon substrate, by nitriding, to form a thin insulating layer.
The thin insulating layer is preferably formed by thermal oxidation of the silicon.
In the majority of instances, however, the active regions will remain covered by the thin insulating layer 18.
The thin insulating layer 102 preferably has a quadratic roughness of less than 0, 5 nanometers.
This layer enables the subsequent formation of a thin insulating layer that is homogeneous and continuous.
Above this substrate are formed gate fingers 3 separated from the substrate by a thin insulating layer 4.
On this same side,a very thin insulating layer of SILICON BIOXIDE, obtained by evaporation, is deposited.
Optionally the single-crystal substrate 53 is replaced by a thin insulating layer(of AlN, sapphire, MgO, etc..
A thin insulating layer is formed where the second layer of gates has been exposed during step(e);
According to a characteristic of the invention, the thin insulating layer is made of insulating resin.
The elements are formed from two ferromagnetic plates, each of which can hold a magnetization, separated by a thin insulating layer.
Floating gate 5 is insulated from the substrate by a thin insulating layer 8, for example, silicon oxide.
A thin insulating layer(not shown) is inserted, if necessary, between the Bragg reflector and conductive layer 3.
Particularly good results are obtained with a thin insulating layer composed of cyanoethylpullulane.
Making a vertical insulating wall above the periphery of the maintained portion of the thin insulating layer.
Formation on the active regions of a thin insulating layer which constitutes the gate insulator of the transistors.
FIG. 4 is a diagram of a portion of the substrate shown in FIG. 3 on which a thin insulating layer has been formed.
It is advantageously envisaged that a thin insulating layer should be arranged between the electrodes and the bottom of the recesses.
A control gate 22 at least partly covers the floating gate andis separated therefrom by a thin insulating layer 24.
