Examples of using Sputtering process in English and their translations into Portuguese
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Software Universal generators for your sputtering process.
Ion etching is a sputtering process that can remove very fine quantities of material.
With a homogeneous microstructure,it will have uniform erosion in the sputtering process.
PVD Sputtering processes enable almost unlimited production of coatings on any type of surface.
Due to high resistance oxidation and corrosion,molybdenum tube has stable sputtering processes.
The sputtering process is made by ion bombardment of the target surface, the target material bombarded out technology.
This is due to the versatility, uniformity, ease of expansion, andhigh throughput of the sputtering process.
LOW-E glass manufacturing by Vacuum magnetron sputtering process can not be single-use, can only be synthesized insulating glass or laminated glass to used.
The alternative technology that can meet this is pvd- physical vapor deposition, with the sputtering process.
The TruPlasma DC Series 3000(G2) is suitable for a number of DC sputtering processes- including use as a replacement for pulsed process power supplies.
Generally speaking, there are several characteristics of the thin film coating by sputtering process.
Features: the sputtering process has the advantages of low substrate temperature, thin film quality, uniform and compact structure, good firmness and reproducibility.
As a new generation of DC generators, the TruPlasma DC Series 3000(G2)is suited to numerous DC sputtering processes.
Architectural glass The large area coating of architectural glass in a direct current sputtering process places particularly high demands on the process power supply.
With their state-of-the-art arc management, TruPlasma DC Series 3000(G2)direct current generators prove themselves in many sputtering processes.
Today, solar cells have been developed to the third generation(thin-film solar cells), and the sputtering process is the first to be the preferred method of preparation.
The process power supplies from the TruPlasma Bipolar Series 4000(G2) were specially developed for plasma-based coating by means of physical vapor deposition(PVD), plasma-enhanced chemical vapor deposition(PECVD), and reactive sputtering processes.
While only charged secondary ions emitted from the material surface through the sputtering process are used to analyze the chemical composition of the material, these represent a small fraction of the particles emitted from the sample.
As a new generation of DC generators, the TruPlasma DC Series 3000(G2)is suitable for a variety of DC sputtering processes.
Metal is generally soft, andsputtering targets need to install a special machine to complete in the sputtering process, the machine internal for high voltage and high vacuum environment, therefore, back mainly to fixed target, and the need to have good electrical and thermal conductivity.
With its broad power spectrum and fast arc recognition, the TruPlasma DC Series 3000 direct current generatorsensure defect-free surfaces and high coating rates- even in particularly demanding direct current sputtering processes with critical materials.
A langmuir probe was also built andautomated to analyze the plasma sheath energies generated during the sputtering process, correlating the effective electron temperature(teff) and electron density(ne) measurements to the chemical stoichiometry and crystallographic structure of the produced thin films.
The charged particles(commonly used gas positive ions) target surface bombardment of a material, the surface of the target atoms or molecules escape from the phenomenon, at the same time,due to the conversion of the sputtering process containing momentum, so the sputtered particles is directional.
In general, sputtering target is mainly composed of a target blank, back and other parts, which is of high speed target blank ion beam bombardment of a target material,the core part belongs to the sputtering target, in sputtering process, target blank by the ion impinges upon the surface atoms by sputtering deposited on the substrate and fly out into electronic film due to the high purity;
Vacuum melting process HIP sputtering arc chromium target.