Examples of using P-type in English and their translations into Korean
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Colloquial
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Ecclesiastic
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Ecclesiastic
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Programming
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Computer
P-type asteroids.
N- and p-type InP.
P-TYPE 전력조정기.
UV converter for BEAMAGE:23 mm aperture, P-type crystal.
P-type semiconductor.
Electrical contacts are formed on the n- and p-type regions.
P-type semiconductor.
If carbon is implanted, in some embodiments it can be used in P-type only.
P-type semiconductor.
Electroconductivity was to be imparted to Nylon 6 film by introducing Cux S, which is known as the p-type semiconductor.
P-type class 1 receiver.
If the silane were mixed in the amount of hydrogenated or hydrogenated boron phosphate can be N-or P-type amorphous silicon film.
SC/p-type with Zn dope Available.
If there is a constant generation across the depletion region, then,where xn is the depletion width in the p-type material and xn+xp= W.
A p-type silicon second electrode; and.
On the other hand, compressive strain in thechannel region may increase the mobility of holes, thereby providing the potential for enhancing the performance of P-type transistors.
P-type high pressure pump, multiinjector, low fuel consumption.
The node at the drain of n-type transistor 314 and at the source of transistor 305 may be coupled to p-type transistor 315.
In addition, the p-type substrate 300 is maintained at a low voltage level during programming cycles.
Further, we know that the electric field lines must be continuous across the interface, such the electric field in the p-type side and the n-type side must equal each other at the interface or when x= 0.
Band gap of the p-type inorganic compound semiconductor is preferably 2 eV or more, more preferably 2.5 eV or more.
As the impurity element, an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity is used.
With P7100 oil pump,low-inertia small aperture P-type injector and Honeywell's new high efficiency turbocharger, fuel consumption indicator is far superior to the similar products.
To each of said scanning electrode line having n-type switching transistor elements, a scanning signal which has at least two kinds of non-selective values lower than a non-selective voltage applied to said scanning electrode line having p-type switching transistor element being applied.
If two compounds, a P-type semiconductor with positive electric properties and an N-type semiconductor with negative properties, are connected to allow an electric current to flow, an LED emits light.
Node 312 may be coupled to a p-type transistor 313 coupled to the drain of transistor 309 and the source of transistor 308.
P-type high pressure pump, low inertia, injector with small bore more complete combustion, low fuel consumption, oil seal of valve added, Seal technology for piston ring and valve oil-sealing technique, low fuel and oil consumption.
The P-type semiconductor region 41 existing on both the front and back surfaces of the semiconductor substrate 12 also serves as a hole charge storage region for restraining dark current.
The p-type impurity regions are activated at the same time as hydrogenated, and therefore a phenomenon of the value of the off current of a p-channel TFT becoming higher in a region of high gate voltage can be controlled.