Examples of using Substrate temperature in English and their translations into Korean
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Folding construction conditions: Substrate temperature;
접는 공사 조건: 기판 온도;The substrate temperature can be appropriately set according to the test purpose.
기판 온도는 시험 목적에 따라 적절히 결정될 수 있다.Amorphous films can be deposited below 150° C substrate temperature.
무조직 영화는 150° C 기질 온도의 밑에 예금될 수 있습니다.The substrate temperature can be appropriately set according to the test purpose.
기판 온도는 시험 목적에 따라 적절하게 설정될 수 있다.In a subsequent curing process, the powder coating is melted and chemically cross-linked at substrate temperatures of 150°C to 200°C.
연속적인 치료 과정에서는, 분말 코팅은 150°C에 200°C.의 기질 온도에 녹고 화학적으로 교차 결합됩니다.The substrate temperature can be appropriately set according to the test purpose.
기판 온도는 시험의 목적에 따라 적절하게 설정될 수도 있다.However, the- BT test was different from the+BT test in that voltage applied to the gate after the substrate temperature was increased to 150° C. was- 20 V.
BT 시험도 +BT 시험과 거의 마찬가지 방식으로 행했지만, -BT 시험은 기판 온도를 150℃까지 상승시킨 후에 게이트에 인가하는 전압을 -20V로 했다는 점에서 +BT 시험과 상이하다.The substrate temperature may be determined as appropriate in accordance with the test purpose.
기판 온도는 시험 목적에 따라 적절히 결정될 수 있다.Further, the oxide semiconductor layer 404b is formed under the conditions that the substrate temperature is set to 400° C. and a target having an atomic ratio of In: Ga: Zn=1:1:1 is used.
또한, 산화물 반도체층(404b)을 성막할 때에는 기판 온도를 400℃로 하고 원자수비가 In: Ga: Zn=1:1:1인 타깃을 사용한다.The substrate temperature may be determined as appropriate in accordance with the test purpose.
기판 온도는 시험 목적에 따라 적절하게 설정될 수 있다.Further, the oxide semiconductor layer 404b is formed under the conditions that the substrate temperature is set to 400° C. and a target having an atomic ratio of In: Ga: Zn=1:1:1 is used.
또한, 결정 구조를 갖는 제2 산화물 반도체층(144b)은 기판 온도를 400℃로 하고 In: Ga: Zn=1:1:1의 원자수비를 갖는 타깃을 사용하는 조건하에서 형성된다.The substrate temperature may be determined as appropriate in accordance with the test purpose.
기판 온도는 시험의 목적에 따라 적절하게 설정될 수도 있다.While different numbers have been reported for the Gmax for artificial turf, ranging from the high 60's to over 125, it is important to keep in mind that these numbers are highly dependent on the substrate, temperature, age and maintenance of the field.
인공 잔디 용 Gmax의 60부터 125에 이르는 다양한 수치가보고되었지만 이러한 수치는 기질, 온도, 나이 및 현장 유지 관리에 크게 의존한다는 점을 명심해야합니다.The substrate temperature was kept at 750°C and the deposited film thickness was 200nm(sample provided by University of Basel).
기질 온도는 750°C에 지켜지고 예금한 필름 간격은 200nm (바젤의 대학에 의해 제공되는 견본)이었습니다.The-BT test is described.-BT test was also performed in a similar mannerto the+ BT test, but it differs from the+ BT test in that the voltage applied to the gate after raising the substrate temperature to 150° C is set to -20 V.
And it will be described -BT test. -BT 시험도 +BT 시험과 같은 수순으로 행하지만, 기판 온도를 150℃까지 상승시킨 후에 게이트에 인가하는 전압을 -20V로 하는 점이 상이하다. -BT test is also only perform When the substrate temperature was 100° C., 150° C. and 170° C., the condition of etching residue was quite satisfactory or satisfactory.
도 18에서 보여준 바와 같이, 기판온도는 100℃, 150℃ 및 170℃이었을 때, 에칭잔류물은 상당히 만족 또는 만족 이였다.The-BT test is described.-BT test was also performed in a similar mannerto the+ BT test, but it differs from the+ BT test in that the voltage applied to the gate after raising the substrate temperature to 150° C is set to -20 V.
Description will be made on -BT test. -BT시험도 ＋BT시험과 같은 순서로 실시하지만, 기판 온도를 150℃까지 상승시킨 후에 게이트에 인가하는 전압을 -20 V로 하는 점이 다르다. -BT test is also performed in However, when the substrate temperature is within the above temperature range, the bond between silicon and oxygen is weak, and accordingly, part of oxygen is released by heating.
그러나, 기판 온도가 상기 온도 범위 내에 있을 때, 실리콘 및 산소 사이에서의 결합은 약하며, 따라서 산소의 일부가 열 처리에 의해 방출된다.The-BT test was performed in almost the same manner as that of the+BT test; however, the-BT test was different from the+BT test in that voltage applied to the gate after the substrate temperature was increased to 150° C. was -20 V.
Describe However, in the case where the substrate temperature is within the above temperature range, the bond between silicon and oxygen is weak, and accordingly, part of oxygen is released by heating.
그러나, 기판 온도가 상기 온도 범위 내에 있을 때, 실리콘 및 산소 사이에서의 결합은 약하며, 따라서 산소의 일부가 열 처리에 의해 방출된다.Next, the-BT test is described.-BT test was also performed in a similar manner to the+ BT test, but it differs from the+ BT test in that the voltage applied to the gate after raising the substrate temperature to 150° C is set to -20 V.
Next, a description will be given of If application of voltage is stopped before the substrate temperature was completely decreased to 40° C., the transistor which has been damaged during the BT test is repaired by the influence of residual heat.
기판 온도가 40℃로 완전히 감소되기 전에 전압의 인가가 중단되는 경우, -BT 시험 동안 손상된 트랜지스터가 잔열의 영향으로 회복된다.The substrate temperatures in deposition for Sample A, Sample B, Sample C, Sample D, and Sample E were room temperature, 200° C., 250° C., 300° C., and 400° C., respectively.
In the present method, to prepare a sample A, sample B, sample C, Sample D and Sample E. 예 를 들 어, 샘플 A, 샘플 B, 샘플 C, 샘플 D 및 샘플 E의 성막 시의 기판 온도는, 각각 실온, 200℃, 250℃, 300℃ 및 400℃로 하였다.If application of voltage is stopped before the substrate temperature was completely decreased to 40° C., the transistor which has been damaged during the BT test is repaired by the influence of residual heat.
기판 온도가 40℃까지 완전하게 감소되기 전에 전압의 인가가 중지되면, -BT 시험 동안 손상된 트랜지스터가 잔류 열의 영향에 의해 수리된다.A-BT test was performed under such conditions that a substrate temperature was 150° C., an electric field intensity applied to the gate insulating film was 2 MV/cm, and a time period for application was one hour.
BT 시험은, 기판 온도가 150℃이고, 게이트 절연막에 인가된 전계 강도가 2 MV/cm이며, 인가 시간이 1시간인 이러한 조건하에서 실시되었다. -BT test, and at a substrate temperature of 150 ℃, the electric field intensity applied to the gate insulating film is 2 MV / cm, was carried out under these conditions is the application time of 1 hour.A-BT test was performed under such conditions that a substrate temperature was 150° C., an electric field intensity applied to the gate insulating film was 2 MV/cm, and a time period for application was one hour.
BT 시험은 기판 온도가 150℃이었고, 게이트 절연막에 인가된 전계 강도가 2MV/cm이었고, 인가 시간 기간이 1시간인 조건들 하에서 수행되었다. -BT test was a substrate temperature of 150 ℃, was that the electric field intensity applied to the gate insulating film 2MV / cm, was carried out under the application time period of 1 hour and conditions.In this case, if the application of the voltage is stopped before the substrate temperature is completely lowered, the damage applied to the thin film transistor in the BT test due to the remaining heat is restored;
이 경우, 기판 온도를 완전히 내리기 전에 전압의 인가를 중단하면, 여열로 인해 BT 시험에서 박막 트랜지스터에 가해진 데미지가 회복된다; In this case, when the application of the voltage stops before completely lowering the substrate temperature, due to the remaining heat damage is applied to the thin film transistor is recovered in the BT test;In this case, if the application of the voltage is stopped before the substrate temperature is completely lowered, the damage applied to the thin film transistor in the BT test due to the remaining heat is restored; Therefore,it is necessary to lower the substrate temperature while applying a voltage.
이 경우, 
