Examples of using Indium in English and their translations into Serbian
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Customized indium size.
Aluminum indium gallium phosphide(AlInGaP) is used for red and yellow.
Zonal refining indium and lithium.
Copper indium gallium selenide(CIGS) is a direct band gap material.
Instead, a mixture of liquid metals- gallium, indium, and tin.
Widely used for indium tin oxides, ITO powder and target.
The most common material of transparent electrodes is indium tin oxide(ITO);
Mainly applied to indium tin oxide powder and ITO targets.
Indium phosphide is a binary semiconductor composed of indium and phosphorus.
Wide range of usage such as alloys, special solder, coating, electronics andhigh purity indium, ect.
Indium(111In) capromab pendetide(trade name Prostascint) is used to image the extent of prostate cancer.
It uses harmless alloys instead of a dangerous metal, for example, Galinstan,which is an alloy of gallium, indium and tin.
Refined Indium metal 99.995%, 99.999%, stable quality, different sizes can be customized.
Is a private enterprise that integrates scientific research, material processing and recycling of Tellurium,Bismuth and Indium.
After heating, indium diffuses into the adjacent areas of the semiconductor, turning them into p-type semiconductors.
Electrode of electrochemical capacitor(I-film)was fabricated through the same method with G-film on indium tin oxide(ITO).
Indium gallium nitride(InGaN) is used for green and blue, and with the addition of phosphor, for white light as well.
Theses‘magic dust' polaritons are created by shining a laser at stacked layers of selected atoms such as gallium,arsenic, indium, and aluminum.
Indium granule is made of 4N5 grade Indium ingot in the vacuum and clean workshop, with purity 99.99% and size 1-5mm, highly customization is accepted.
The base is a semiconductor plate(germanium) with a small amount of a donor impurity(n-type)on which a piece of indium is placed, which is an acceptor impurity.
Galinstan, which is 68.5% gallium, 10% tin,and 21.5% indium, not only will melt in your hand, but also in your freezer, with a melting point at -2 degrees F(-19 degrees C).
The FETs are manufactured using variety of materials as silicon carbide(Sic), gallium arsenide(GaAs),gallium nitride(GaN), indium gallium arsenide(InGaAs).
High purity 99.99% with high transmittance,low impurity contents and resistivity, Indium oxide is raw materal of the most widely used for indium tin oxides.
Santech manufactures a range of Gallium alloys that can be tailored to customers specific needs and applications, typically GaInSn, GaIn, GaAl,GaSn and Copper Indium Gallium Selenide(CIGS).
The 2004 Draft Recommendations propose adding aluminium(aluma),gallium(galla), indium(indiga) and thallium(thalla) to the list of heteroatoms for which Hantzsch-Widman nomenclature is used, and removing mercury.
Such FETs are manufactured using a variety of materials such as silicon carbide(SiC), gallium arsenide(GaAs),gallium nitride(GaN), and indium gallium arsenide(InGaAs).
In the past people used indium tin oxide because of this material has a high degree of transparency, and its thin layer of production technology has been more mature, Silver Nanoparticle but its conductivity is only general.".
Typical dots are made of binary compounds such as lead sulfide, lead selenide, cadmium selenide, cadmium sulfide,cadmium telluride, indium arsenide, and indium phosphide.
The manufacturing process, called“SuPR-NaP”(Surface Photo-Reactive Nanometal Printing), can be used at normal temperatures andatmospheric pressures without the etching equipment needed for indium tin oxide(ITO) or metal film.